TK12J55D 2013-11-01 1 toshiba field effect transistor silicon n channel mos type ( -mos ) TK12J55D switching regulator applications ? low drain-source on-resistance: r ds (on) = 0.48 ? (typ.) ? high forward transfer admittance: |y fs | = 6.0 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 550 v) ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 550 v gate-source voltage v gss 30 v dc (note 1) i d 12 drain current pulse (note 1) i dp 48 a drain power dissipation (tc = 25c) p d 190 w single pulse avalanche energy (note 2) e as 317 mj avalanche current i ar 12 a repetitive avalanche energy (note 3) e ar 19 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g . the application of high temperature/cu rrent/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precaut ions?/?derating concept and methods?) and individual reliability data (i.e. reliabilit y test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 0.658 c/w thermal resistance, channel to ambient r th (ch-a) 50 c/w note 1: ensure that the channel temperature does not exceed 150c. note 2: v dd = 90 v, t ch = 25c (initial), l = 3.8 mh, r g = 25 , i ar = 12 a note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic-sensitive device. handle with care. unit: mm 20.0 0.3 20.5 0.5 4.8 max. 3.3 max. 9.0 2.0 1.0 4.5 2.0 2.8 3.2 0.2 15.9 max. 5.45 0.2 5.45 0.2 2.0 0.3 1.0 1 2 3 0.3 0.25 0.6 0.3 0.1 1.8 max. jedec ? jeita sc-65 toshiba 2-16c1b weight : 4.6 g (typ.) 1 3 2 1. gate 2. drain(heat sink) 3. source start of commercial production 2009-01
TK12J55D 2013-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 30 v, v ds = 0 v ? ? 1 a drain cut-off current i dss v ds = 550 v, v gs = 0 v ? ? 10 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 550 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on-resistance r ds (on) v gs = 10 v, i d = 6 a D 0.48 0.57 forward transfer admittance |y fs | v ds = 10 v, i d = 6 a 1.5 6.0 D s input capacitance c iss ? 1550 ? reverse transfer capacitance c rss ? 7 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 165 ? pf rise time t r ? 25 ? turn-on time t on ? 60 ? fall time t f ? 15 ? switching time turn-off time t off duty 1%, t w = 10 s ? 110 ? ns total gate charge q g ? 28 ? gate-source charge q gs ? 18 ? gate-drain charge q gd v dd 400 v, v gs = 10 v, i d = 12 a ? 10 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 12 a pulse drain reverse current (note 1) i drp ? ? ? 48 a forward voltage (diode) v dsf i dr = 12 a, v gs = 0 v ? ? ?1.7 v reverse recovery time t rr ? 1300 ? ns reverse recovery charge q rr i dr = 12 a, v gs = 0 v, di dr /dt = 100 a/ s ? 13 ? c marking k12j55d toshiba lot no. note 4 part no. (or abbreviation code) note 4: a line under a lot no. ident ifies the indication of product labels [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is directive 2011/65/e u of the european parliament and of the council of 8 june 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. r l = 33 0 v 10 v v gs v dd 200 v i d = 6 a v out 50
TK12J55D 2013-11-01 3 0.1 0.1 1 10 100 1 10 0.1 10 100 0.1 1 100 25 100 tc = ? 55c 1 10 0 6 8 10 0 4 8 12 16 20 4 2 i d = 12 a 3 6 0 0 2 4 6 8 10 8 tc = ? 55c 25 100 12 16 4 20 16 12 8 4 0 20 0 20 50 40 30 10 v gs = 5 v 5.5 6.75 7 10,8 6.5 7.25 6 10 6 4 0 8 2 0 2 4 6 8 10 v gs = 5v 5.5 5.75 6 10,8 6.25 6.5 common source tc = 25c pulse test i d ? v ds i d ? v ds i d ? v gs v ds ? v gs common source tc = 25c pulse test |y fs | ? i d r ds (on) ? i d drain-source voltage v ds (v) drain current i d (a) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) forward transfer admittance ? y fs ? (s) common source tc = 25c pulse test common source tc = 25c pulse test common source v ds = 20 v pulse test common source v ds = 20 v pulse test v gs = 10 v, 15 v
TK12J55D 2013-11-01 4 0 10 50 500 200 100 300 400 0 30 20 20 8 4 12 16 0 v ds v dd = 100 v 200 400 v gs 40 0 1 2 3 5 ? 80 ? 40 0 40 80 120 160 4 1 0.1 10 100 1000 10000 1 10 100 c iss c oss c rss 0 0.1 ? 0.2 1 10 100 ? 0.6 ? 0.8 ? 1.2 v gs = 0, ? 1 v 10 5 1 3 ? 0.4 ? 1.0 ? 1.4 160 ? 40 0 40 80 120 ? 80 2.0 1.6 1.2 0.8 0.4 0 i d = 12a 3 6 v th ? tc r ds (on) ? tc i dr ? v ds p d ? tc common source tc = 25c pulse test common source v gs = 0 v f =1mhz tc = 25c common source v ds = 10 v i d = 1ma pulse test case temperature tc (c) gate threshold voltage v th (v) case temperature tc (c) total gate charge q g (nc) capacitance c (pf) capacitance ? v ds drain-source voltage v ds (v) drain-source on resistance r ds (on) ( ) case temperature tc (c) drain reverse current i dr (a) drain-source voltage v ds (v) drain power dissipation p d (w) drain-source voltage v ds (v) dynamic input / output characteristics gate-source voltage v gs (v) common source i d = 12 a tc = 25c pulse test common source v gs = 10 v pulse test 250 50 150 100 200 0 0 80 120 40 160
TK12J55D 2013-11-01 5 0.01 1 0.1 10 100 10 1000 100 100 s * 1 ms * v dss max 0.001 1 10 0.01 10 0.1 1 100 1m 10m 100m 1 10 t p dm t duty = t/t r th (ch-c) = 0.658c/w dut y =0.5 0.2 0.1 0.05 0.02 0.01 r g = 25 v dd = 90 v, l = 3.8 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as test circuit wave form i ar b vdss v dd v ds ? 15 v 15 v e as ? t ch channel temperature (initial) t ch (c) avalanche energy e as (mj) r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) single pulse * single pulse tc=25c curves must be derated linearly with increase in temperature. i d max (pulse) * i d max (continuous) dc operation tc = 25c safe operating area drain-source voltage v ds (v) drain current i d (a) 500 400 300 200 100 0 25 50 75 100 125 150
TK12J55D 2013-11-01 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situat ions in which a malfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest ve rsions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and applicat ion notes for product and the precautions and condi tions set forth in the "toshiba se miconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications , including but not limited to (a) determining t he appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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